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Fabricante	Infineon (IRF)
Tipo de transistor	P-MOSFET
Tecnología	HEXFET®
Polarización	unipolar
Tensión drenaje-fuente	-100V
Corriente del drenaje	-6.8A
Poder disipado	48W
Carcasa	TO220AB
Tensión puerta-fuente	±20V
Resistencia en estado de transferencia	480mΩ
Montaje	THT
Carga de puerta	18nC

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Inicio / Tienda / Principal / Electrónica y Electricidad / Componentes / Semiconductores / Transistores / Transistor P-MosFet 100V 6,8A 48W TO220AB IRF9520NPBF

Transistor P-MosFet 100V 6,8A 48W TO220AB IRF9520NPBF

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Inicio / Tienda / Principal / Electrónica y Electricidad / Componentes / Semiconductores / Transistores / Transistor P-MosFet 100V 6,8A 48W TO220AB IRF9520NPBF

Transistor P-MosFet 100V 6,8A 48W TO220AB IRF9520NPBF

Descripción

Valoraciones

Consultas generales

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